| PART |
Description |
Maker |
| STP100NF03L-03 STB100NF03L-03 STB100NF03L-03-01 ST |
N-CHANNEL 30V - 0.0026 W -100A D??AK/I??AK/TO-220 STripFET??II POWER MOSFET
N-CHANNEL 30V - 0.0026 OHM -100A D2PAK/I2PAK/TO-220 STRIPFET II POWER MOSFET
N-CHANNEL 30V - 0.0026 OHM -100A D2PAK/I2PAK/TO-220 STRIPFET II POWER MOSFET
N-CHANNEL 30V - 0.0026 W -100A D?PAK/I?PAK/TO-220 STripFET⑩ II POWER MOSFET
N-CHANNEL 30V - 0.0026 W -100A DPAK/IPAK/TO-220 STripFET II POWER MOSFET
N-CHANNEL 30V - 0.0026 W -100A D2PAK/I2PAK/TO-220 STripFET II POWER MOSFET
N-CHANNEL 30V - 0.0026 W -100A D?PAK/I?PAK/TO-220 STripFETII POWER MOSFET
N沟道30V 0.0026欧姆- 100号A D2PAK/I2PAK/TO-220 STRIPFET二功率MOSFET
N沟道30V 0.0026的W - 100号A?巴基斯我?PAK/TO-220 STripFET⑩二功率MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
|
| IRL2203S IRL2203STRR IRL2203STRL |
30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=30V, Rds(on)=0.007ohm, Id=100A?
|
International Rectifier
|
| ULB4132G-TA3-T ULB4132L-TA3-T |
100A, 30V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| IRF1407L IRF1407S IRF1407STRR |
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?)
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A)
Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A)
TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 75V的五（巴西）直| 100号A（丁）|63AB
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| STY100NS20FD 7739 |
N-CHANNEL Power MOSFET
N-CHANNEL 200V 0.022 OHM 100A ISOTOP MESH OVERLAY MOSFET
From old datasheet system
N-CHANNEL 200V - 0.022ohm - 100A Max247 MESH OVERLAY⑩ Power MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| CD9011 CD9011D CD9011E CD9011F CD9011G CD9011H CD9 |
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 29 - 273 hFE
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 29 - 44 hFE
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 40 - 59 hFE
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 54 - 80 hFE
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 72 - 108 hFE
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 97 - 146 hFE
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 132 - 198 hFE
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 182 - 273 hFE
|
Continental Device India Limited
|
| FS100VSJ03 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 100A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 30V的五（巴西）直| 100号A（丁）|63AB
|
Renesas Electronics, Corp.
|
| SPI100N03S2-03 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.3mOhm, 100A, NL
|
Infineon
|
| FDB6676S FDP6676S FDB6676SS62Z |
76 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
From old datasheet system
30V N-Channel PowerTrench SyncFET™
30V N-Channel PowerTrench SyncFET⑩
30V N-Channel PowerTrench SyncFET TM
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| SPD100N03S2L-04 |
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, DPAK, RDSon = 4.2mOhm, 100A, LL
|
INFINEON[Infineon Technologies AG]
|
| STB80NE03L-06 5472 -STB80NE03L-06 |
N-Channel 30V-0.005惟-80A- D2PAK STripFETTM Power MOSFET(N???MOSFET)
N-Channel 30V-0.005Ω-80A- D2PAK STripFETTM Power MOSFET(N功率MOSFET)
From old datasheet system
N - CHANNEL 30V - 0.005 - 80A - D 2 PAK STripFET TM POWER MOSFET
|
意法半导
STMicro
|
| STS7PF30L07 |
P-CHANNEL 30V - 0.16楼? - 7A - SO-8 STripFET垄芒 II Power MOSFET
P-CHANNEL 30V - 0.16Ω - 7A - SO-8 STripFET?II Power MOSFET
|
STMicroelectronics
|
